R6086YNZ4C13
Rohm Semiconductor
Produkt-Nr.:
R6086YNZ4C13
Hersteller:
Paket:
TO-247G
Charge:
-
Datenblatt:
Beschreibung:
NCH 600V 86A, TO-247, POWER MOSF
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 17A, 12V |
| Supplier Device Package | TO-247G |
| Vgs(th) (Max) @ Id | 6V @ 4.6mA |
| Drain to Source Voltage (Vdss) | 600 V |
| Series | - |
| Power Dissipation (Max) | 781W (Tc) |
| Package / Case | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Package | Tube |
| Base Product Number | R6086 |
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15,000 ㎡Lager auf Lager
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