MSCSM170HRM451AG
Microchip Technology
Produkt-Nr.:
MSCSM170HRM451AG
Hersteller:
Paket:
-
Charge:
-
Datenblatt:
Beschreibung:
PM-MOSFET-SIC-SP1F
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
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Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Feature | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Three Level Inverter) |
| Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 1000V, 3020pF @ 1000V |
| Gate Charge (Qg) (Max) @ Vgs | 178nC @ 20V, 232nC @ 20V |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V |
| Supplier Device Package | - |
| Vgs(th) (Max) @ Id | 3.2V @ 2.5mA, 2.8V @ 3mA |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV), 1200V (1.2kV) |
| Series | - |
| Package / Case | Module |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 319W (Tc), 395W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc), 89A (Tc) |
| Mfr | Microchip Technology |
| Package | Bulk |
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