APTM60A11FT1G
detaildesc

APTM60A11FT1G

Microchip Technology

Produkt-Nr.:

APTM60A11FT1G

Paket:

SP1

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET 2N-CH 600V 40A SP1

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 10552pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Mounting Type Chassis Mount
Product Status Active
Rds On (Max) @ Id, Vgs 132mOhm @ 33A, 10V
Supplier Device Package SP1
Vgs(th) (Max) @ Id 5V @ 2.5mA
Drain to Source Voltage (Vdss) 600V
Series -
Package / Case SP1
Technology MOSFET (Metal Oxide)
Power - Max 390W
Current - Continuous Drain (Id) @ 25°C 40A
Mfr Microchip Technology
Package Bulk
Base Product Number APTM60