APTM10HM19FT3G
Microchip Technology
Produkt-Nr.:
APTM10HM19FT3G
Hersteller:
Paket:
SP3
Charge:
-
Datenblatt:
-
Beschreibung:
MOSFET 4N-CH 100V 70A SP3
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Configuration | 4 N-Channel (Half Bridge) |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 35A, 10V |
| Supplier Device Package | SP3 |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain to Source Voltage (Vdss) | 100V |
| Series | - |
| Package / Case | SP3 |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 208W |
| Current - Continuous Drain (Id) @ 25°C | 70A |
| Mfr | Microchip Technology |
| Package | Bulk |
| Base Product Number | APTM10 |
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15,000 ㎡Lager auf Lager
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