MSCSM120AM31T1AG
detaildesc

MSCSM120AM31T1AG

Microchip Technology

Produkt-Nr.:

MSCSM120AM31T1AG

Paket:

-

Charge:

-

Datenblatt:

pdf

Beschreibung:

PM-MOSFET-SIC-SP1F

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature -
Configuration 2 N Channel (Phase Leg)
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs 232nC @ 20V
Mounting Type Chassis Mount
Product Status Active
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Supplier Device Package -
Vgs(th) (Max) @ Id 2.8V @ 3mA
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 395W (Tc)
Current - Continuous Drain (Id) @ 25°C 89A (Tc)
Mfr Microchip Technology
Package Bulk
Base Product Number MSCSM120