EPC2021ENGR
detaildesc

EPC2021ENGR

EPC

Produkt-Nr.:

EPC2021ENGR

Hersteller:

EPC

Paket:

Die

Charge:

-

Datenblatt:

pdf

Beschreibung:

TRANS GAN 80V 60A BUMPED DIE

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : Bitte Anfrage

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 2.5mOhm @ 29A, 5V
Supplier Device Package Die
Vgs(th) (Max) @ Id 2.5V @ 14mA
Drain to Source Voltage (Vdss) 80 V
Series eGaN®
Power Dissipation (Max) -
Package / Case Die
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Mfr EPC
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Cut Tape (CT)
Base Product Number EPC20