EPC2014
detaildesc

EPC2014

EPC

Produkt-Nr.:

EPC2014

Hersteller:

EPC

Paket:

Die

Charge:

-

Datenblatt:

pdf

Beschreibung:

GANFET N-CH 40V 10A DIE OUTLINE

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 5 V
Mounting Type Surface Mount
Product Status Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs 16mOhm @ 5A, 5V
Supplier Device Package Die
Vgs(th) (Max) @ Id 2.5V @ 2mA
Drain to Source Voltage (Vdss) 40 V
Series eGaN®
Power Dissipation (Max) -
Package / Case Die
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Mfr EPC
Vgs (Max) +6V, -5V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Tape & Reel (TR)
Base Product Number EPC20