2N7002E
detaildesc

2N7002E

ANBON SEMICONDUCTOR (INT'L) LIMITED

Produkt-Nr.:

2N7002E

Paket:

SOT-23

Charge:

-

Datenblatt:

pdf

Beschreibung:

N-CHANNEL SMD MOSFET ESD PROTECT

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : 36422

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $0.133

    $0.133

  • 10

    $0.09215

    $0.9215

  • 100

    $0.04959

    $4.959

  • 500

    $0.038969

    $19.4845

  • 1000

    $0.027056

    $27.056

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 18 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 5Ohm @ 300mA, 10V
Supplier Device Package SOT-23
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series -
Power Dissipation (Max) 350mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 340mA (Ta)
Mfr ANBON SEMICONDUCTOR (INT'L) LIMITED
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number 2N7002