1SS403,H3F
detaildesc

1SS403,H3F

Toshiba Semiconductor and Storage

Produkt-Nr.:

1SS403,H3F

Paket:

USC

Charge:

-

Datenblatt:

-

Beschreibung:

DIODE GEN PURP 200V 100MA USC

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 15827

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $0.342

    $0.342

  • 10

    $0.27835

    $2.7835

  • 100

    $0.14763

    $14.763

  • 500

    $0.097147

    $48.5735

  • 1000

    $0.066063

    $66.063

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Produkt informationen

Parameter-Info

Benutzer handbuch

Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 60 ns
Capacitance @ Vr, F 3pF @ 0V, 1MHz
Mounting Type Surface Mount
Product Status Active
Supplier Device Package USC
Current - Reverse Leakage @ Vr 1 µA @ 200 V
Series -
Package / Case SC-76, SOD-323
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA
Mfr Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max) 200 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 100mA
Operating Temperature - Junction 125°C (Max)
Base Product Number 1SS403