SQJB60EP-T1_BE3

Vishay Siliconix

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SQJB60EP-T1_BE3

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PowerPAK® SO-8 Dual Asymmetric

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Description:

DUAL N-CHANNEL 60-V (D-S) 175C M

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En stock : 2930

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	12mOhm @ 10A, 10V
Supplier Device Package	PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	60V
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Power - Max	48W (Tc)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SQJB60