SQ4961EY-T1_GE3

Vishay Siliconix

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SQ4961EY-T1_GE3

Fabricant:

Forfait:

8-SOIC

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Description:

MOSFET DUAL P-CHAN 60V SO8

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En stock : 2146

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	85mOhm @ 3.5A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	60V
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	3.3W
Current - Continuous Drain (Id) @ 25°C	4.4A (Tc)
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SQ4961