SIZ300DT-T1-GE3

Vishay Siliconix

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SIZ300DT-T1-GE3

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8-PowerPair®

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Description:

MOSFET 2N-CH 30V 11A POWERPAIR

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En stock : 13

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	24mOhm @ 9.8A, 10V
Supplier Device Package	8-PowerPair®
Vgs(th) (Max) @ Id	2.4V @ 250µA
Drain to Source Voltage (Vdss)	30V
Series	TrenchFET®
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	16.7W, 31W
Current - Continuous Drain (Id) @ 25°C	11A, 28A
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SIZ300