SI9945BDY-T1-GE3

Vishay Siliconix

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SI9945BDY-T1-GE3

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Forfait:

8-SOIC

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Description:

MOSFET 2N-CH 60V 5.3A 8-SOIC

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En stock : 35521

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	58mOhm @ 4.3A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	60V
Series	TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	3.1W
Current - Continuous Drain (Id) @ 25°C	5.3A
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SI9945