SI7900AEDN-T1-E3

Vishay Siliconix

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SI7900AEDN-T1-E3

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PowerPAK® 1212-8 Dual

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Description:

MOSFET 2N-CH 20V 6A 1212-8

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En stock : 14785

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual) Common Drain
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	26mOhm @ 8.5A, 4.5V
Supplier Device Package	PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id	900mV @ 250µA
Drain to Source Voltage (Vdss)	20V
Series	TrenchFET®
Package / Case	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Power - Max	1.5W
Current - Continuous Drain (Id) @ 25°C	6A
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SI7900