SI5908DC-T1-GE3

Vishay Siliconix

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SI5908DC-T1-GE3

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1206-8 ChipFET™

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Description:

MOSFET 2N-CH 20V 4.4A 1206-8

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En stock : 28252

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	40mOhm @ 4.4A, 4.5V
Supplier Device Package	1206-8 ChipFET™
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20V
Series	TrenchFET®
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Power - Max	1.1W
Current - Continuous Drain (Id) @ 25°C	4.4A
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SI5908