SI4931DY-T1-E3

Vishay Siliconix

Produit non:

SI4931DY-T1-E3

Fabricant:

Forfait:

8-SOIC

Lot:

Fiche technique:

Description:

MOSFET 2P-CH 12V 6.7A 8-SOIC

Quantité:

Livraison:

Paiement:

En stock : 4690

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	52nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	18mOhm @ 8.9A, 4.5V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	1V @ 350µA
Drain to Source Voltage (Vdss)	12V
Series	TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	1.1W
Current - Continuous Drain (Id) @ 25°C	6.7A
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SI4931