SI3900DV-T1-GE3

Vishay Siliconix

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SI3900DV-T1-GE3

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Forfait:

6-TSOP

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Description:

MOSFET 2N-CH 20V 2A 6-TSOP

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En stock : 2871

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	125mOhm @ 2.4A, 4.5V
Supplier Device Package	6-TSOP
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	20V
Series	TrenchFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Power - Max	830mW
Current - Continuous Drain (Id) @ 25°C	2A
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SI3900