SCT3105KW7TL

Rohm Semiconductor

Produit non:

SCT3105KW7TL

Fabricant:

Forfait:

TO-263-7

Lot:

Fiche technique:

Description:

SICFET N-CH 1200V 23A TO263-7

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En stock : 1955

Minimum: 1 Multiples: 1

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Operating Temperature	175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	574 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	137mOhm @ 7.6A, 18V
Supplier Device Package	TO-263-7
Vgs(th) (Max) @ Id	5.6V @ 3.81mA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	125W
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -4V
Package	Tape & Reel (TR)
Base Product Number	SCT3105