GNP1150TCA-ZE2

Rohm Semiconductor

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GNP1150TCA-ZE2

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Forfait:

DFN8080AK

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Description:

ECOGAN, 650V 11A DFN8080AK, E-MO

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En stock : 3459

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	112 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.7 nC @ 6 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	195mOhm @ 1.9A, 5.5V
Supplier Device Package	DFN8080AK
Vgs(th) (Max) @ Id	2.4V @ 18mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	62.5W (Tc)
Package / Case	8-PowerDFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+6V, -10V
Drive Voltage (Max Rds On, Min Rds On)	5V, 5.5V
Package	Tape & Reel (TR)
Base Product Number	GNP1150