RV5C040APTCR1

Rohm Semiconductor

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RV5C040APTCR1

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Forfait:

DFN1616-8S

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Description:

MOSFET P-CH 20V 4A DFN1616-6

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En stock : 3000

Minimum: 1 Multiples: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	85mOhm @ 4A, 4.5V
Supplier Device Package	DFN1616-8S
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	700mW (Ta)
Package / Case	6-PowerWFDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	-8V, 0V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	RV5C040