RT1A060APTR

Rohm Semiconductor

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RT1A060APTR

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Forfait:

8-TSST

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Description:

MOSFET P-CH 12V 6A 8TSST

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En stock : 56

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	7800 pF @ 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	19mOhm @ 6A, 4.5V
Supplier Device Package	8-TSST
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	12 V
Series	-
Power Dissipation (Max)	600mW (Ta)
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	-8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	RT1A060