RSR020N06HZGTL

Rohm Semiconductor

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RSR020N06HZGTL

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TSMT3

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Description:

MOSFET N-CH 60V 2A TSMT3

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En stock : 5747

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.7 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	170mOhm @ 2A, 10V
Supplier Device Package	TSMT3
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	60 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	700mW (Ta)
Package / Case	SC-96
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	RSR020