RD3P05BATTL1

Rohm Semiconductor

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RD3P05BATTL1

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Forfait:

TO-252

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Description:

PCH -100V -50A POWER MOSFET: RD3

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En stock : 2125

Minimum: 1 Multiples: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4620 pF @ 50 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	41mOhm @ 25A, 10V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	101W (Ta)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	RD3P05