R6011KNX

Rohm Semiconductor

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R6011KNX

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Forfait:

TO-220FM

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Description:

MOSFET N-CH 600V 11A TO220FM

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En stock : 420

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	390mOhm @ 3.8A, 10V
Supplier Device Package	TO-220FM
Vgs(th) (Max) @ Id	5V @ 1mA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	53W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	R6011