R6009RND3TL1

Rohm Semiconductor

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R6009RND3TL1

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TO-252

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Description:

600V 9A TO-252, PRESTOMOS WITH I

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En stock : 2680

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	640 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 15 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	665mOhm @ 4.5A, 15V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	7V @ 5.5mA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	125W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tape & Reel (TR)
Base Product Number	R6009