R6004CNDTL

Rohm Semiconductor

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R6004CNDTL

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CPT3

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Description:

MOSFET N-CH 600V 4A CPT3

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En stock : 100

Minimum: 1 Multiples: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.8Ohm @ 2A, 10V
Supplier Device Package	CPT3
Vgs(th) (Max) @ Id	4.5V @ 1mA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	40W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	R6004