IRLB4132PBF

Infineon Technologies

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IRLB4132PBF

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Forfait:

TO-220AB

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Description:

MOSFET N-CH 30V 78A TO220AB

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En stock : 10273

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5110 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 4.5 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	3.5mOhm @ 40A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	2.35V @ 100µA
Drain to Source Voltage (Vdss)	30 V
Series	HEXFET®
Power Dissipation (Max)	140W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	78A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	IRLB4132