BSC091N03MSCGATMA1

Infineon Technologies

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BSC091N03MSCGATMA1

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Forfait:

PG-TDSON-8-6

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Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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En stock : 24335

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9.1mOhm @ 30A, 10V
Supplier Device Package	PG-TDSON-8-6
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	SIPMOS®
Power Dissipation (Max)	2.5W (Ta), 28W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 44A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk