IRF7326D2TRPBF

Infineon Technologies

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IRF7326D2TRPBF

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Forfait:

8-SO

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Description:

MOSFET P-CH 30V 3.6A 8SO

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En stock : 2090

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	100mOhm @ 1.8A, 10V
Supplier Device Package	8-SO
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	FETKY™
Power Dissipation (Max)	2W (Ta)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.6A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)