IPI60R199CPXKSA2

Infineon Technologies

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IPI60R199CPXKSA2

Fabricant:

Forfait:

PG-TO262-3-1

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Description:

HIGH POWER_LEGACY

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En stock : 500

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1520 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	199mOhm @ 9.9A, 10V
Supplier Device Package	PG-TO262-3-1
Vgs(th) (Max) @ Id	3.5V @ 660µA
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS®
Power Dissipation (Max)	139W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPI60R199