IPB100N04S204ATMA4

Infineon Technologies

Produit non:

IPB100N04S204ATMA4

Fabricant:

Forfait:

PG-TO263-3-2

Lot:

Fiche technique:

Description:

MOSFET N-CH 40V 100A TO263-3

Quantité:

Livraison:

Paiement:

En stock : 1000

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5300 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	172 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.3mOhm @ 80A, 10V
Supplier Device Package	PG-TO263-3-2
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	OptiMOS™
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB100