IPB03N03LB G

Infineon Technologies

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IPB03N03LB G

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Forfait:

PG-TO263-3

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Description:

MOSFET N-CH 30V 80A D2PAK

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En stock : 792

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	7624 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	2.8mOhm @ 55A, 10V
Supplier Device Package	PG-TO263-3
Vgs(th) (Max) @ Id	2V @ 100µA
Drain to Source Voltage (Vdss)	30 V
Series	OptiMOS™
Power Dissipation (Max)	150W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPB03N