GT700P08D3

Goford Semiconductor

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GT700P08D3

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Forfait:

8-DFN (3.15x3.05)

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Description:

P-80V,-16A,RD(MAX)<75M@-10V,VTH-

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En stock : 4980

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1591 pF @ 40 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	75mOhm @ 2A, 10V
Supplier Device Package	8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id	3.5V @ 250µA
Drain to Source Voltage (Vdss)	80 V
Series	-
Power Dissipation (Max)	69W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)