G12P10TE

Goford Semiconductor

Produit non:

G12P10TE

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Forfait:

TO-220

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Description:

P-100V,-12A,RD(MAX)<200M@-10V,VT

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En stock : 75

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	200mOhm @ 6A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	40W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube