G230P06F

Goford Semiconductor

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G230P06F

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Forfait:

TO-220F

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Description:

MOSFET P-CH 60V 42A TO-220F

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En stock : 33

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4669 pF @ 30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	23mOhm @ 10A, 10V
Supplier Device Package	TO-220F
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	67.57W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube