GT650N15K

Goford Semiconductor

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GT650N15K

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Forfait:

TO-252

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Description:

N150V,RD(MAX)<65M@10V,VTH2.5V~4.

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En stock : 2097

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 75 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	65mOhm @ 10A, 10V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	4.5V @ 250µA
Drain to Source Voltage (Vdss)	150 V
Series	-
Power Dissipation (Max)	68W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)