GNP1070TC-ZE2

Rohm Semiconductor

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GNP1070TC-ZE2

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Forfait:

DFN8080K

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Description:

ECOGAN, 650V 20A DFN8080K, E-MOD

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En stock : 4465

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 6 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	98mOhm @ 1.9A, 5.5V
Supplier Device Package	DFN8080K
Vgs(th) (Max) @ Id	2.4V @ 18mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	56W (Tc)
Package / Case	8-PowerDFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+6V, -10V
Drive Voltage (Max Rds On, Min Rds On)	5V, 5.5V
Package	Tape & Reel (TR)
Base Product Number	GNP1070