G3R350MT12J

GeneSiC Semiconductor

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G3R350MT12J

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Forfait:

TO-263-7

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Description:

SIC MOSFET N-CH 11A TO263-7

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En stock : 5712

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	334 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V
Supplier Device Package	TO-263-7
Vgs(th) (Max) @ Id	2.69V @ 2mA
Drain to Source Voltage (Vdss)	1200 V
Series	G3R™
Power Dissipation (Max)	75W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	GeneSiC Semiconductor
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Base Product Number	G3R350