G085P02TS

Goford Semiconductor

Produit non:

G085P02TS

Fabricant:

Forfait:

8-TSSOP

Lot:

Fiche technique:

Description:

P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V

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En stock : 5000

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.5mOhm @ 4.2A, 4.5V
Supplier Device Package	8-TSSOP
Vgs(th) (Max) @ Id	900mV @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	1.05W (Tc)
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.2A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)