VS-FB190SA10
Vishay General Semiconductor - Diodes Division
Produkt-Nr.:
VS-FB190SA10
Hersteller:
Paket:
SOT-227
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 100V 190A SOT227
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 10700 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Mounting Type | Chassis Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 180A, 10V |
| Supplier Device Package | SOT-227 |
| Vgs(th) (Max) @ Id | 4.35V @ 250µA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | - |
| Power Dissipation (Max) | 568W (Tc) |
| Package / Case | SOT-227-4, miniBLOC |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tj) |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | FB190 |
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2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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