FA57SA50LC
detaildesc

FA57SA50LC

Vishay General Semiconductor - Diodes Division

Produkt-Nr.:

FA57SA50LC

Paket:

SOT-227

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 500V 57A SOT-227

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 338 nC @ 10 V
Mounting Type Chassis Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 80mOhm @ 34A, 10V
Supplier Device Package SOT-227
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 500 V
Series HEXFET®
Power Dissipation (Max) 625W (Tc)
Package / Case SOT-227-4, miniBLOC
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Mfr Vishay General Semiconductor - Diodes Division
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number FA57