TSM061NA03CR RLG
detaildesc

TSM061NA03CR RLG

Taiwan Semiconductor Corporation

Produkt-Nr.:

TSM061NA03CR RLG

Paket:

8-PDFN (5x6)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 30V 88A 8PDFN

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1133 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 6.1mOhm @ 16A, 10V
Supplier Device Package 8-PDFN (5x6)
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 78W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TSM061