TSM085P03CV
detaildesc

TSM085P03CV

Taiwan Semiconductor Corporation

Produkt-Nr.:

TSM085P03CV

Paket:

8-PDFN (3.1x3.1)

Charge:

-

Datenblatt:

pdf

Beschreibung:

-30, -64, SINGLE P-CHANNEL

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3234 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 8.5mOhm @ 14A, 10V
Supplier Device Package 8-PDFN (3.1x3.1)
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 2.4W (Ta), 50W (Tc)
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 64A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TSM085