STP8NK100Z
detaildesc

STP8NK100Z

STMicroelectronics

Produkt-Nr.:

STP8NK100Z

Hersteller:

STMicroelectronics

Paket:

TO-220

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 1000V 6.5A TO220AB

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 1.85Ohm @ 3.15A, 10V
Supplier Device Package TO-220
Vgs(th) (Max) @ Id 4.5V @ 100µA
Drain to Source Voltage (Vdss) 1000 V
Series SuperMESH™
Power Dissipation (Max) 160W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STP8NK100