STD3NM60-1
STMicroelectronics
Produkt-Nr.:
STD3NM60-1
Hersteller:
Paket:
I-PAK
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 600V 3A IPAK
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 324 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.5A, 10V |
| Supplier Device Package | I-PAK |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Drain to Source Voltage (Vdss) | 600 V |
| Series | MDmesh™ |
| Power Dissipation (Max) | 42W (Tc) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Mfr | STMicroelectronics |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | STD3N |
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