STP200N4F3
detaildesc

STP200N4F3

STMicroelectronics

Produkt-Nr.:

STP200N4F3

Hersteller:

STMicroelectronics

Paket:

TO-220

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 40V 120A TO220-3

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V
Supplier Device Package TO-220
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 40 V
Series STripFET™
Power Dissipation (Max) 300W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STP200