STI20N65M5
detaildesc

STI20N65M5

STMicroelectronics

Produkt-Nr.:

STI20N65M5

Hersteller:

STMicroelectronics

Paket:

I2PAK (TO-262)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 650V 18A I2PAK

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 1000

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $2.888

    $2.888

  • 10

    $2.5954

    $25.954

  • 100

    $2.12667

    $212.667

  • 500

    $1.810358

    $905.179

  • 1000

    $1.526812

    $1526.812

  • 2000

    $1.450479

    $2900.958

  • 5000

    $1.39594

    $6979.7

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1434 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
Supplier Device Package I2PAK (TO-262)
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 650 V
Series MDmesh™ V
Power Dissipation (Max) 130W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STI20