STD11N65M2
detaildesc

STD11N65M2

STMicroelectronics

Produkt-Nr.:

STD11N65M2

Hersteller:

STMicroelectronics

Paket:

DPAK

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 650V 7A DPAK

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 98

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.634

    $1.634

  • 10

    $1.3604

    $13.604

  • 100

    $1.082525

    $108.2525

  • 500

    $0.916009

    $458.0045

  • 1000

    $0.777224

    $777.224

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V
Supplier Device Package DPAK
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 650 V
Series MDmesh™ II Plus
Power Dissipation (Max) 85W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STD11