SQJ962EP-T1-GE3
Vishay Siliconix
Produkt-Nr.:
SQJ962EP-T1-GE3
Hersteller:
Paket:
PowerPAK® SO-8 Dual
Charge:
-
Datenblatt:
Beschreibung:
MOSFET 2N-CH 60V 8A 8SO
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.3A, 10V |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain to Source Voltage (Vdss) | 60V |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | PowerPAK® SO-8 Dual |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 25W |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Mfr | Vishay Siliconix |
| Package | Tape & Reel (TR) |
| Base Product Number | SQJ962 |
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30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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