SQJ914EP-T1_BE3
Vishay Siliconix
Produkt-Nr.:
SQJ914EP-T1_BE3
Hersteller:
Paket:
PowerPAK® SO-8 Dual
Charge:
-
Datenblatt:
Beschreibung:
DUAL N-CHANNEL 30-V (D-S) 175C M
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 1110pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 4.5A, 10V |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain to Source Voltage (Vdss) | 30V |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | PowerPAK® SO-8 Dual |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 27W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Mfr | Vishay Siliconix |
| Package | Tape & Reel (TR) |
| Base Product Number | SQJ914 |
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30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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